Part Details for 2N3572 by Texas Instruments
Results Overview of 2N3572 by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
2N3572 Information
2N3572 by Texas Instruments is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: 2N3572 by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for 2N3572
2N3572 Part Data Attributes
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2N3572
Texas Instruments
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Datasheet
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2N3572
Texas Instruments
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72
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| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | Low Noise | |
| Case Connection | Isolated | |
| Collector Current-Max (IC) | 0.05 A | |
| Collector-Base Capacitance-Max | 0.85 Pf | |
| Collector-Emitter Voltage-Max | 13 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 20 | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JEDEC-95 Code | TO-72 | |
| JESD-30 Code | O-MBCY-W4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Cylindrical | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | Npn | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Wire | |
| Terminal Position | Bottom | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 1500 Mhz |
Alternate Parts for 2N3572
This table gives cross-reference parts and alternative options found for 2N3572. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3572, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NE461M02 | NEC Electronics America Inc | Check for Price | RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | 2N3572 vs NE461M02 |
| BFW94 | Baneasa SA | Check for Price | RF Small Signal Bipolar Transistor | 2N3572 vs BFW94 |
| BFP540ESD | Infineon Technologies AG | Check for Price | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN | 2N3572 vs BFP540ESD |
| LT3046 | Motorola Semiconductor Products | Check for Price | RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-46 | 2N3572 vs LT3046 |
| BF748-T/R | NXP Semiconductors | Check for Price | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 | 2N3572 vs BF748-T/R |
| 2SC3357-T1RH | NEC Electronics Group | Check for Price | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | 2N3572 vs 2SC3357-T1RH |
| BFQ19TRL13 | NXP Semiconductors | Check for Price | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | 2N3572 vs BFQ19TRL13 |
| 2SC5338-T1-A | NEC Electronics Group | Check for Price | RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | 2N3572 vs 2SC5338-T1-A |
| 2SC5338SE | NEC Electronics Group | Check for Price | Si, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4 | 2N3572 vs 2SC5338SE |
| MRF5812R1 | Microsemi Corporation (now Microchip) | Check for Price | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | 2N3572 vs MRF5812R1 |