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2N4416AC1DJQRSL3D by:

Small Signal Field-Effect Transistor, 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3

Part Details for 2N4416AC1DJQRSL3D by TT Electronics Resistors

Overview of 2N4416AC1DJQRSL3D by TT Electronics Resistors

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Industrial Automation Smart Cities Agriculture Technology Medical Imaging Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Aerospace and Defense Communication and Networking Robotics and Drones

Part Details for 2N4416AC1DJQRSL3D

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2N4416AC1DJQRSL3D Part Data Attributes:

2N4416AC1DJQRSL3D TT Electronics Resistors
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2N4416AC1DJQRSL3D TT Electronics Resistors Small Signal Field-Effect Transistor, 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-3
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description HERMETIC SEALED PACKAGE-3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 35 V
Drain-source On Resistance-Max 150 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.2 pF
JESD-30 Code R-PDSO-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.3 W
Qualification Status Not Qualified
Reference Standard MIL
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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