Part Details for 2N5551UBT by STMicroelectronics
Results Overview of 2N5551UBT by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N5551UBT Information
2N5551UBT by STMicroelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N5551UBT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N5551UBT
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Avnet Americas | Transistor GP BJT NPN 160V 0.5A 4-Pin Case UB Waffle - Waffle Pack (Alt: 2N5551UBT) COO: France RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Waffle Pack | 0 |
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RFQ |
US Tariff Estimator: 2N5551UBT by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
2N5551UBT Part Data Attributes
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2N5551UBT
STMicroelectronics
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Datasheet
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2N5551UBT
STMicroelectronics
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Base Capacitance-Max | 6 Pf | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-XDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | Npn | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.58 W | |
| Reference Standard | Esa/Scc 5201/019 | |
| Surface Mount | Yes | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon | |
| VCEsat-Max | 0.2 V |