Part Details for 2N6660 by Vishay Intertechnologies
Overview of 2N6660 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N6660
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13C2019
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Newark | Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.1A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V, Power Dissipation:6.25W, Msl:- Rohs Compliant: No |Vishay 2N6660 RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Bristol Electronics | 8 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-39 | 6 |
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$4.8664 / $6.6360 | Buy Now |
Part Details for 2N6660
2N6660 CAD Models
2N6660 Part Data Attributes
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2N6660
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
2N6660
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-39, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | LOW THRESHOLD | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.99 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JEDEC-95 Code | TO-205AD | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for 2N6660
This table gives cross-reference parts and alternative options found for 2N6660. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6660, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6660 | Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6660 vs 2N6660 |
2N6660-JQR | Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6660 vs 2N6660-JQR |
2N6660-QR-B | 1000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6660 vs 2N6660-QR-B |
JANTX2N6660 | Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | Motorola Semiconductor Products | 2N6660 vs JANTX2N6660 |
2N6660 | 1000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6660 vs 2N6660 |
2N6660-JQR-B | 1000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6660 vs 2N6660-JQR-B |
2N6660JTXP02 | Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD | Vishay Siliconix | 2N6660 vs 2N6660JTXP02 |
2N6660-QR-B | Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6660 vs 2N6660-QR-B |
2N6660JTX02 | Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD | Vishay Siliconix | 2N6660 vs 2N6660JTX02 |