Datasheets
2N6756 by:

14A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

Part Details for 2N6756 by TT Electronics Power and Hybrid / Semelab Limited

Overview of 2N6756 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Industrial Automation Motor control systems

Part Details for 2N6756

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2N6756 Part Data Attributes

2N6756 TT Electronics Power and Hybrid / Semelab Limited
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2N6756 TT Electronics Power and Hybrid / Semelab Limited 14A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for 2N6756

This table gives cross-reference parts and alternative options found for 2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, Microsemi Corporation 2N6756 vs JANTXV2N6756
JAN2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6756 vs JAN2N6756
IRF130-JQR-B 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6756 vs IRF130-JQR-B
IRF130R1 Power Field-Effect Transistor, 45A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6756 vs IRF130R1
JANTX2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6756 vs JANTX2N6756
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6756 vs IRF130
2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC 2N6756 vs 2N6756
JANTX2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier 2N6756 vs JANTX2N6756
IRF130-JQR-B Power Field-Effect Transistor, 45A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6756 vs IRF130-JQR-B
2N6756PBF Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier 2N6756 vs 2N6756PBF
Part Number Description Manufacturer Compare
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6756 vs 2N6758
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC 2N6756 vs IRF141
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, FORMERLY TO-3, 2 PIN Defense Logistics Agency 2N6756 vs JANTXV2N6756
IRF1302SHR Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier 2N6756 vs IRF1302SHR
IRF220 Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG 2N6756 vs IRF220
BUZ25 19A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6756 vs BUZ25
IRF120PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier 2N6756 vs IRF120PBF
2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Fairchild Semiconductor Corporation 2N6756 vs 2N6756
IRF140-JQR-B 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 TT Electronics Power and Hybrid / Semelab Limited 2N6756 vs IRF140-JQR-B
IRF225 Power Field-Effect Transistor, 3.3A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier 2N6756 vs IRF225

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