Part Details for IRF140-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
Results Overview of IRF140-JQR-B by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF140-JQR-B Information
IRF140-JQR-B by TT Electronics Power and Hybrid / Semelab Limited is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF140-JQR-B
IRF140-JQR-B CAD Models
IRF140-JQR-B Part Data Attributes
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IRF140-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRF140-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Part Package Code | TO-204AA | |
| Package Description | Flange Mount, O-Mbfm-P2 | |
| Pin Count | 2 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 250 Mj | |
| Case Connection | Drain | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.089 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Pin/Peg | |
| Terminal Position | Bottom | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF140-JQR-B
This table gives cross-reference parts and alternative options found for IRF140-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF140-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF140 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF140-JQR-B vs IRF140 |
| IRF141 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF140-JQR-B vs IRF141 |
| IRF143 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF140-JQR-B vs IRF143 |
| IRF142 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | IRF140-JQR-B vs IRF142 |
| IRF141 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 27A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF140-JQR-B vs IRF141 |
| IRF140R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF140-JQR-B vs IRF140R1 |
| IRF143 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF140-JQR-B vs IRF143 |
| IRF142 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | Power Field-Effect Transistor, 24A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF140-JQR-B vs IRF142 |
| IRF140 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF140-JQR-B vs IRF140 |
| IRF141 | Rochester Electronics LLC | Check for Price | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN | IRF140-JQR-B vs IRF141 |