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Transistors Power Field-Effect Transistors 2N6768

2N6768
Description: Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Overview of 2N6768 by Harris Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

CAD Models for 2N6768 by Harris Semiconductor
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Part Data Attributes for 2N6768 by Harris Semiconductor
Parametric Data

2N6768
Harris Semiconductor
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-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
200 pF
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
25 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
100 ns
Want to compare parts?
  1. 2N6768
    Harris Semiconductor
    Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
    VS

Alternate Parts for 2N6768

This table gives cross-reference parts and alternative options found for 2N6768. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6768, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N6768 14A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC 2N6768 vs JANTX2N6768
IRF353 13A, 350V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, METAL PACKAGE-2 Motorola Mobility LLC 2N6768 vs IRF353
2N6768PBF Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier 2N6768 vs 2N6768PBF
IRF353 Power Field-Effect Transistor, 13A I(D), 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corporation 2N6768 vs IRF353
IRF350 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,14A I(D),TO-204AA Freescale Semiconductor 2N6768 vs IRF350
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp 2N6768 vs JANTXV2N6768
IRF350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6768 vs IRF350
IRF353 Power Field-Effect Transistor, 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corp (RETIRED) 2N6768 vs IRF353
JAN2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6768 vs JAN2N6768
IRF351 Power Field-Effect Transistor, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corp (RETIRED) 2N6768 vs IRF351
Part Number Description Manufacturer Compare
IRF352 Power Field-Effect Transistor, 13A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6768 vs IRF352
IRF350 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 2N6768 vs IRF350
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors 2N6768 vs 2N6768
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation 2N6768 vs JANTXV2N6768
IRF351 Power Field-Effect Transistor, 15A I(D), 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corporation 2N6768 vs IRF351
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency 2N6768 vs JANTX2N6768
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation 2N6768 vs JANTX2N6768
2N6768PBF Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier 2N6768 vs 2N6768PBF
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6768 vs 2N6768
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation 2N6768 vs 2N6768

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