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Transistors Power Field-Effect Transistors 2N6770

2N6770
Description: Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

Overview of 2N6770 by TT Electronics Resistors

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Part Data Attributes for 2N6770 by TT Electronics Resistors
Parametric Data

2N6770
TT Electronics Resistors
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
TT ELECTRONICS PLC
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
12 A
Drain-source On Resistance-Max
6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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  1. 2N6770
    TT Electronics Resistors
    Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
    VS

Alternate Parts for 2N6770

This table gives cross-reference parts and alternative options found for 2N6770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC 2N6770 vs IRF451
2N6770E3 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation 2N6770 vs 2N6770E3
JAN2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6770 vs JAN2N6770
IRF450 Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors 2N6770 vs IRF450
2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG 2N6770 vs 2N6770
JANTXV2N6770 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation 2N6770 vs JANTXV2N6770
IRF451 Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6770 vs IRF451
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6770 vs IRF451
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC 2N6770 vs IRF451
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation 2N6770 vs JANTX2N6770
Part Number Description Manufacturer Compare
IRF451 Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6770 vs IRF451
IRF450R1 Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors 2N6770 vs IRF450R1
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6770 vs JANTX2N6770
IRF450 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics 2N6770 vs IRF450
JANTXV2N6770 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation 2N6770 vs JANTXV2N6770
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation 2N6770 vs JANTX2N6770
2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6770 vs 2N6770
JANTXV2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6770 vs JANTXV2N6770
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG 2N6770 vs JANTX2N6770
JANTXV2N6770 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC 2N6770 vs JANTXV2N6770

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