There are no models available for this part yet.
Overview of 2N6847 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for 2N6847 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 100 Package Multiple: 1 | 0 |
|
$13.2000 | Buy Now | ||
DISTI #
C1S322002832590
|
Chip1Stop | MOSFET RoHS: Not Compliant | 12 |
|
$15.4100 | Buy Now |
CAD Models for 2N6847 by Infineon Technologies AG
Part Data Attributes for 2N6847 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
180 mJ
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
200 V
|
Drain Current-Max (ID)
|
2.5 A
|
Drain-source On Resistance-Max
|
1.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-205AF
|
JESD-30 Code
|
O-MBCY-W3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
METAL
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
20 W
|
Pulsed Drain Current-Max (IDM)
|
10 A
|
Qualification Status
|
Not Qualified
|
Reference Standard
|
MILITARY STANDARD (USA)
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
WIRE
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for 2N6847
This table gives cross-reference parts and alternative options found for 2N6847. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6847, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFF9220-JQR-BR1 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6847 vs IRFF9220-JQR-BR1 |
IRFF9220 | 2.5A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Rochester Electronics LLC | 2N6847 vs IRFF9220 |
IRFF9220-JQR-BR1 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6847 vs IRFF9220-JQR-BR1 |
IRFF9220R1 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6847 vs IRFF9220R1 |
IRFF9220 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | 2N6847 vs IRFF9220 |
IRFF9220 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6847 vs IRFF9220 |
JANTXV2N6847 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | Microsemi Corporation | 2N6847 vs JANTXV2N6847 |
IRFF9220-JQR-B | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6847 vs IRFF9220-JQR-B |
IRFF9220R1 | 2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6847 vs IRFF9220R1 |
JANTX2N6847 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | 2N6847 vs JANTX2N6847 |
Related Parts for 2N6847
-
IRFF110Power Field-Effect Transistors
-
2N4391Small Signal Field-Effect Transistors
-
SS26Rectifier Diodes
-
KRM55WR72A156MH01KFixed Capacitors
-
CRCW060340K2FKTAFixed Resistors
-
2216Headers and Edge Type Connectors
-
2N3506ASmall Signal Bipolar Transistors
-
SRN6045-2R2YFixed Inductors
-
2N3879Power Bipolar Transistors