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N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, 2000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78K6147
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Newark | N Channel Mosfet, 60V, 200Ma, To-92, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:200Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000-D26Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4577 |
|
$0.1960 / $0.3120 | Buy Now |
DISTI #
59M4766
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Newark | Mosfet, N-Ch, 60V, 0.2A, 150Deg C, 0.4W, Transistor Polarity:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:200Ma, On Resistance Rds(On):5Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.1V Rohs Compliant: Yes |Onsemi 2N7000-D26Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1485 |
|
$0.2140 / $0.3300 | Buy Now |
DISTI #
48AC1550
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Newark | Small Signal Mosfet 60V 200Ma 5 Ohm Single N-Channel To-92/ Reel |Onsemi 2N7000-D26Z RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.0900 / $0.1560 | Buy Now |
DISTI #
2N7000-D26ZCT-ND
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DigiKey | MOSFET N-CH 60V 200MA TO92-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
18257 In Stock |
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$0.0865 / $0.5400 | Buy Now |
DISTI #
2N7000-D26Z
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Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N7000-D26Z) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days Container: Reel | 30000 |
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$0.0777 / $0.0844 | Buy Now |
DISTI #
2N7000-D26Z
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Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N7000-D26Z) RoHS: Compliant Min Qty: 8000 Package Multiple: 2000 Container: Reel | 0 |
|
$0.0787 / $0.0940 | Buy Now |
DISTI #
512-2N7000D26Z
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Mouser Electronics | MOSFETs N-CHANNEL 60V 200mA RoHS: Compliant | 28485 |
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$0.0860 / $0.3000 | Buy Now |
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Future Electronics | 2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 34000Reel |
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$0.0776 / $0.0870 | Buy Now |
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Future Electronics | 2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks Container: Reel | 16000Reel |
|
$0.0776 / $0.0870 | Buy Now |
|
Future Electronics | 2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3 RoHS: Compliant pbFree: Yes Min Qty: 12000 Package Multiple: 2000 Lead time: 15 Weeks Container: Reel | 0Reel |
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$0.0776 / $0.0870 | Buy Now |
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2N7000-D26Z
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7000-D26Z
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, 2000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 135AR | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.4 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7000-D26Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000-D26Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2N7000G | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 1000-BLKBX | onsemi | 2N7000-D26Z vs 2N7000G |
2N7000J25Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000-D26Z vs 2N7000J25Z |
2N7000RLRE | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN | onsemi | 2N7000-D26Z vs 2N7000RLRE |
2N7000ZL1G | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, CASE 29-11, 3 PIN | onsemi | 2N7000-D26Z vs 2N7000ZL1G |
2N7000RLRF | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Motorola Semiconductor Products | 2N7000-D26Z vs 2N7000RLRF |
2N7000J24Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000-D26Z vs 2N7000J24Z |
2N7000BUJ05Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000-D26Z vs 2N7000BUJ05Z |
2N7000D10Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | 2N7000-D26Z vs 2N7000D10Z |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000-D26Z vs 2N7000 |
2N7000TAJ05Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000-D26Z vs 2N7000TAJ05Z |