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Part Details for 2N7002BKW,115 by Nexperia
Overview of 2N7002BKW,115 by Nexperia
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- Number of Functional Equivalents:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2N7002BKW,115
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
55T7739
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Newark | Mosfet, N Channel, 60V, 0.31A, Sot323, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:310Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002BKW,115 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 17899 |
|
$0.0840 / $0.3020 | Buy Now |
|
DISTI #
28AC7862
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Newark | 2N7002Bkw/Sot323/Sc-70 Rohs Compliant: Yes |Nexperia 2N7002BKW,115 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 18000 |
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$0.0310 | Buy Now |
|
DISTI #
86AK7916
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Newark | Mosfet, N Ch, 60V, 0.31A, Sot323, Reel, Transistor Polarity:N Channel, Continuous Drain Current Id:310Ma, Drain Source Voltage Vds:60V, On Resistance Rds(On):1Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Rohs Compliant: Yes |Nexperia 2N7002BKW,115 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 6000 |
|
$0.0470 / $0.0590 | Buy Now |
|
DISTI #
1727-4788-1-ND
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DigiKey | MOSFET N-CH 60V 310MA SOT323 Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
32231 In Stock |
|
$0.0349 / $0.3500 | Buy Now |
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DISTI #
2N7002BKW,115
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Avnet Americas | Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R - Tape and Reel (Alt: 2N7002BKW,115) RoHS: Not Compliant Min Qty: 27000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 18000 |
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$0.0253 / $0.0302 | Buy Now |
|
DISTI #
2N7002BKW,115
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R - Tape and Reel (Alt: 2N7002BKW,115) RoHS: Compliant Min Qty: 27000 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
|
$0.0253 / $0.0302 | Buy Now |
|
DISTI #
2N7002BKW,115
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/R - Tape and Reel (Alt: 2N7002BKW,115) RoHS: Compliant Min Qty: 27000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
|
$0.0571 | Buy Now |
|
DISTI #
771-2N7002BKW115
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Mouser Electronics | MOSFET 2N7002BKW/SOT323/SC-70 RoHS: Compliant | 66537 |
|
$0.0330 / $0.3300 | Buy Now |
|
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Future Electronics | 2N7002BKW Series N-Channel 60 V 1.6 Ohm 275 mW 0.5nC SMT TrenchMOS FET - SOT-323 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 219000Reel |
|
$0.0274 / $0.0311 | Buy Now |
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|
Future Electronics | 2N7002BKW Series N-Channel 60 V 1.6 Ohm 275 mW 0.5nC SMT TrenchMOS FET - SOT-323 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 15000Reel |
|
$0.0274 / $0.0309 | Buy Now |
Part Details for 2N7002BKW,115
2N7002BKW,115 CAD Models
2N7002BKW,115 Part Data Attributes
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2N7002BKW,115
Nexperia
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Datasheet
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Compare Parts:
2N7002BKW,115
Nexperia
2N7002BKW - 60 V, 310 mA N-channel Trench MOSFET@en-us SC-70 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | SC-70 | |
| Package Description | SC-70, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT323 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.31 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Pulsed Drain Current-Max (IDM) | 1.2 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |