Part Details for 2N7002LT1 by Motorola Semiconductor Products
Overview of 2N7002LT1 by Motorola Semiconductor Products
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2N7002LT1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 7838 |
|
RFQ | ||
|
|
Bristol Electronics | 8721 |
|
RFQ | ||
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 42 |
|
$0.0600 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 3711 |
|
$0.0450 / $0.1500 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 2400 |
|
$0.0450 / $0.1500 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 2102 |
|
$0.0450 / $0.1500 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 1888 |
|
$0.0450 / $0.1500 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 13 |
|
$0.1500 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 9339 |
|
$0.1120 / $0.6400 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-236 | 15312 |
|
$0.3288 / $1.0960 | Buy Now |
Part Details for 2N7002LT1
2N7002LT1 CAD Models
2N7002LT1 Part Data Attributes
|
|
2N7002LT1
Motorola Semiconductor Products
Buy Now
Datasheet
|
Compare Parts:
2N7002LT1
Motorola Semiconductor Products
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | CASE 318-08, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |