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Transistors / Power Field-Effect Transistors / 2N7002P,215
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2N7002P,215 by:
Nexperia

Power Field-Effect Transistor, 0.36A I(D), 60V, 1.6ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236AB

Part Details for 2N7002P,215 by Nexperia

Results Overview of 2N7002P,215 by Nexperia

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2N7002P,215 Information

2N7002P,215 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002P,215

Part # Distributor Description Stock Price Buy
DISTI # 26AC6379
Newark 2N7002P/Sot23/To-236Ab Rohs Compliant: Yes |Nexperia 2N7002P,215 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel 0
  • 3,000 $0.0330
  • 6,000 $0.0310
  • 12,000 $0.0300
  • 18,000 $0.0290
$0.0290 / $0.0330 Buy Now
DISTI # 97W3383
Newark Mosfet, N-Ch, 60V, 0.36A, 0.35W, To236Ab, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:360Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.75V Rohs Compliant: Yes |Nexperia 2N7002P,215 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Tape & Reel 0
  • 3,000 $0.0470
$0.0470 Buy Now
DISTI # 28T0307
Newark Mosfet, n Channel,60V,0.36A, sot23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:360Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.75V Rohs Compliant: Yes |Nexperia 2N7002P,215 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $0.2800
  • 10 $0.1850
  • 25 $0.1560
  • 50 $0.1260
  • 100 $0.0970
  • 250 $0.0970
  • 500 $0.0950
$0.0950 / $0.2800 Buy Now
DISTI # 2N7002P,215
Avnet Americas - Tape and Reel (Alt: 2N7002P,215) COO: China RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 53 Weeks, 1 Days Container: Tape & Reel 0
  • 3,000 $0.0377
  • 6,000 $0.0362
  • 12,000 $0.0348
  • 24,000 $0.0339
  • 48,000 $0.0325
$0.0325 / $0.0377 Buy Now
Bristol Electronics   Min Qty: 14 8885
  • 14 $0.3750
  • 41 $0.1875
  • 268 $0.1125
  • 1,335 $0.0750
  • 4,668 $0.0562
$0.0562 / $0.3750 Buy Now
Bristol Electronics   6620
RFQ
DISTI # 2N7002P.215
TME Transistor: N-MOSFET, Trench, unipolar, 60V, 0.28A, Idm: 1.2A, 420mW Min Qty: 1 100
  • 1 $0.1500
  • 10 $0.1070
  • 50 $0.0754
  • 100 $0.0647
  • 500 $0.0447
$0.0447 / $0.1500 Buy Now
DISTI # 2N7002P,215
Avnet Asia (Alt: 2N7002P,215) RoHS: Compliant Min Qty: 39000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days 96000
RFQ
Chip Stock Transistor:N-MOSFET, unipolar, 60V, 360mA, 1.6ohm, 350mW, -55+150deg.C, SMD, SOT23, AEC-Q100 103000
RFQ
Greenchips   Date Code: 23+/CN 27000
RFQ
Vyrian Other Function Semiconductors 6918
RFQ

Part Details for 2N7002P,215

2N7002P,215 CAD Models

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  • 3D Model

    2d presentation

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2N7002P,215 Part Data Attributes

Parametric Data
2N7002P,215 Nexperia
Buy Now Datasheet
Compare Parts:
2N7002P,215 Nexperia Power Field-Effect Transistor, 0.36A I(D), 60V, 1.6ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236AB
Rohs Code Yes
Part Life Cycle Code Not Recommended
Part Package Code TO-236
Package Description Sot-23, 3 Pin
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code Compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.36 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology Trench Mosfet
Feedback Cap-Max (Crss) 4 Pf
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 1.14 W
Pulsed Drain Current-Max (IDM) 1.2 A
Reference Standard Aec-Q101; Iec-60134
Surface Mount Yes
Terminal Finish Tin
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for 2N7002P,215

This table gives cross-reference parts and alternative options found for 2N7002P,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002P,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N7002KT Micro Commercial Components Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V 2N7002P,215 vs 2N7002KT
Part Number Manufacturer Composite Price Description Compare
2N7002K Rectron Semiconductor Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2N7002P,215 vs 2N7002K
2N7002KX-13 Diodes Incorporated Check for Price Small Signal Field-Effect Transistor 2N7002P,215 vs 2N7002KX-13
2N7002K-T1 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 2N7002P,215 vs 2N7002K-T1
equivalents icon

2N7002P,215 Related Parts

2N7002P,215 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002P,215 is -55°C to 150°C.

  • Yes, the 2N7002P,215 is suitable for high-frequency switching applications due to its low gate-source capacitance and high switching speed.

  • No, the 2N7002P,215 is a low-power MOSFET with a maximum drain current of 1.5 A and a maximum power dissipation of 1.4 W, making it unsuitable for high-power applications.

  • Yes, the 2N7002P,215 is compatible with 3.3 V or 5 V logic levels, making it suitable for use in a wide range of digital circuits.

  • Yes, the 2N7002P,215 has built-in ESD protection, which helps to protect the device from electrostatic discharge damage.

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