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2N7002PV - 60 V, 350 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
59T0226
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Newark | Mosfet, Nn Channel, 60V, 0.35A, Sot666, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:350Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.75V Rohs Compliant: Yes |Nexperia 2N7002PV,115 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3000 |
|
$0.0850 / $0.4250 | Buy Now |
DISTI #
36AH1091
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Newark | 2N7002Pv/Sot666/Sot6 Rohs Compliant: Yes |Nexperia 2N7002PV,115 Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 24000 |
|
$0.0550 | Buy Now |
DISTI #
1727-4792-1-ND
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DigiKey | MOSFET 2N-CH 60V 0.35A SOT666 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5836 In Stock |
|
$0.0480 / $0.4000 | Buy Now |
DISTI #
2N7002PV,115
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R - Tape and Reel (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 24000 |
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RFQ | |
DISTI #
771-2N7002PV-115
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Mouser Electronics | MOSFET NRND for Automotive Applications 2N7002PV/SOT666/SOT6 RoHS: Compliant | 18696 |
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$0.0480 / $0.4000 | Buy Now |
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Future Electronics | 2N7002PV Series N-Channel 60 V 2 Ohm 330 mW 0.8 nC SMT TrenchMOS FET - SOT-666 RoHS: Compliant pbFree: Yes Min Qty: 16000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.0471 / $0.0520 | Buy Now |
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Future Electronics | 2N7002PV Series N-Channel 60 V 2 Ohm 330 mW 0.8 nC SMT TrenchMOS FET - SOT-666 RoHS: Compliant pbFree: Yes Min Qty: 20000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.0471 / $0.0525 | Buy Now |
DISTI #
2N7002PV,115
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R - Tape and Reel (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 24000 |
|
RFQ | |
DISTI #
2N7002PV.115
|
TME | Transistor: N-MOSFET x2, Trench, unipolar, 60V, 0.25A, Idm: 1.2A Min Qty: 5 | 0 |
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$0.0660 / $0.1740 | RFQ |
DISTI #
2N7002PV,115
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R - Tape and Reel (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 24000 |
|
RFQ |
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2N7002PV,115
Nexperia
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Datasheet
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2N7002PV,115
Nexperia
2N7002PV - 60 V, 350 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-F6 | |
Pin Count | 6 | |
Manufacturer Package Code | SOT666 | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.35 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |