Datasheets
2N7002PV,115 by:

2N7002PV - 60 V, 350 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin

Part Details for 2N7002PV,115 by Nexperia

Overview of 2N7002PV,115 by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for 2N7002PV,115

Part # Distributor Description Stock Price Buy
DISTI # 59T0226
Newark Mosfet, Nn Channel, 60V, 0.35A, Sot666, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:350Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.75V Rohs Compliant: Yes |Nexperia 2N7002PV,115 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3000
  • 1 $0.4250
  • 10 $0.3030
  • 25 $0.2440
  • 50 $0.1870
  • 100 $0.1290
  • 250 $0.1140
  • 500 $0.1000
  • 1,000 $0.0850
$0.0850 / $0.4250 Buy Now
DISTI # 36AH1091
Newark 2N7002Pv/Sot666/Sot6 Rohs Compliant: Yes |Nexperia 2N7002PV,115 Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 24000
  • 1 $0.0550
$0.0550 Buy Now
DISTI # 1727-4792-1-ND
DigiKey MOSFET 2N-CH 60V 0.35A SOT666 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5836
In Stock
  • 1 $0.4000
  • 10 $0.2820
  • 100 $0.1424
  • 500 $0.1162
  • 1,000 $0.0862
  • 2,000 $0.0725
  • 4,000 $0.0725
  • 8,000 $0.0693
  • 12,000 $0.0600
  • 28,000 $0.0588
  • 100,000 $0.0487
  • 200,000 $0.0480
$0.0480 / $0.4000 Buy Now
DISTI # 2N7002PV,115
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R - Tape and Reel (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 24000
RFQ
DISTI # 771-2N7002PV-115
Mouser Electronics MOSFET NRND for Automotive Applications 2N7002PV/SOT666/SOT6 RoHS: Compliant 18696
  • 1 $0.4000
  • 10 $0.2820
  • 100 $0.1150
  • 1,000 $0.0730
  • 4,000 $0.0720
  • 8,000 $0.0630
  • 24,000 $0.0560
  • 100,000 $0.0480
$0.0480 / $0.4000 Buy Now
Future Electronics 2N7002PV Series N-Channel 60 V 2 Ohm 330 mW 0.8 nC SMT TrenchMOS FET - SOT-666 RoHS: Compliant pbFree: Yes Min Qty: 16000 Package Multiple: 4000 Container: Reel 0
Reel
  • 4,000 $0.0520
  • 8,000 $0.0507
  • 12,000 $0.0500
  • 20,000 $0.0491
  • 40,000 $0.0471
$0.0471 / $0.0520 Buy Now
Future Electronics 2N7002PV Series N-Channel 60 V 2 Ohm 330 mW 0.8 nC SMT TrenchMOS FET - SOT-666 RoHS: Compliant pbFree: Yes Min Qty: 20000 Package Multiple: 4000 Container: Reel 0
Reel
  • 4,000 $0.0525
  • 8,000 $0.0512
  • 16,000 $0.0499
  • 20,000 $0.0495
  • 60,000 $0.0471
$0.0471 / $0.0525 Buy Now
DISTI # 2N7002PV,115
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R - Tape and Reel (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 24000
RFQ
DISTI # 2N7002PV.115
TME Transistor: N-MOSFET x2, Trench, unipolar, 60V, 0.25A, Idm: 1.2A Min Qty: 5 0
  • 5 $0.1740
  • 25 $0.0980
  • 100 $0.0790
  • 500 $0.0710
  • 4,000 $0.0660
$0.0660 / $0.1740 RFQ
DISTI # 2N7002PV,115
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R - Tape and Reel (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 24000
RFQ
DISTI # 2N7002PV,115
Avnet Asia Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 16000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days 52000
  • 16,000 $0.0445
$0.0445 Buy Now
DISTI # 2N7002PV,115
Avnet Silica Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 2 Weeks, 0 Days Silica - 48000
Buy Now
DISTI # 2N7002PV,115
EBV Elektronik Transistor MOSFET Array Dual N-CH 60V 0.35A 6-Pin SOT-666 T/R (Alt: 2N7002PV,115) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 2 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 1972663
element14 Asia-Pacific MOSFET, NN CH, 60V, 0.35A, SOT666 RoHS: Compliant Min Qty: 5 Container: Cut Tape 3000
  • 5 $0.4198
  • 10 $0.2958
  • 100 $0.1204
  • 500 $0.0983
  • 1,000 $0.0756
  • 5,000 $0.0631
$0.0631 / $0.4198 Buy Now
DISTI # 1972663RL
element14 Asia-Pacific MOSFET, NN CH, 60V, 0.35A, SOT666 RoHS: Compliant Min Qty: 100 Container: Reel 3000
  • 100 $0.1204
  • 500 $0.0983
  • 1,000 $0.0756
  • 5,000 $0.0631
$0.0631 / $0.1204 Buy Now
DISTI # 1972663
Farnell MOSFET, NN CH, 60V, 0.35A, SOT666 RoHS: Compliant Min Qty: 5 Lead time: 13 Weeks, 1 Days Container: Cut Tape 3000
  • 5 $0.4583
  • 10 $0.3172
  • 100 $0.1215
  • 500 $0.0970
  • 1,000 $0.0724
  • 5,000 $0.0599
$0.0599 / $0.4583 Buy Now
DISTI # 1972663RL
Farnell MOSFET, NN CH, 60V, 0.35A, SOT666 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel 3000
  • 100 $0.1215
  • 500 $0.0970
  • 1,000 $0.0724
  • 5,000 $0.0599
$0.0599 / $0.1215 Buy Now

Part Details for 2N7002PV,115

2N7002PV,115 CAD Models

2N7002PV,115 Part Data Attributes

2N7002PV,115 Nexperia
Buy Now Datasheet
Compare Parts:
2N7002PV,115 Nexperia 2N7002PV - 60 V, 350 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-F6
Pin Count 6
Manufacturer Package Code SOT666
Reach Compliance Code compliant
Samacsys Manufacturer Nexperia
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.35 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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