Part Details for 2N7336PBF by International Rectifier
Overview of 2N7336PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N7336PBF
2N7336PBF CAD Models
2N7336PBF Part Data Attributes
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2N7336PBF
International Rectifier
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Datasheet
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2N7336PBF
International Rectifier
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | IN-LINE, R-CDIP-T14 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 0.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-036AB | |
JESD-30 Code | R-CDIP-T14 | |
Number of Elements | 4 | |
Number of Terminals | 14 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation Ambient-Max | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for 2N7336PBF
This table gives cross-reference parts and alternative options found for 2N7336PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7336PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTX2N7336 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | Infineon Technologies AG | 2N7336PBF vs JANTX2N7336 |
IRFG6110R1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | 2N7336PBF vs IRFG6110R1 |
IRFG6110-JQR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336PBF vs IRFG6110-JQR-B |
2N7336 | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, | Infineon Technologies AG | 2N7336PBF vs 2N7336 |
2N7336-QR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336PBF vs 2N7336-QR-B |
2N7336R1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336PBF vs 2N7336R1 |
IRFG6110 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | International Rectifier | 2N7336PBF vs IRFG6110 |
IRFG6110-JQR-BR1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336PBF vs IRFG6110-JQR-BR1 |
IRFG6110-JQR-BR1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | 2N7336PBF vs IRFG6110-JQR-BR1 |
IRFG6110R1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336PBF vs IRFG6110R1 |