Part Details for IRFG6110R1 by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFG6110R1 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFG6110R1
IRFG6110R1 CAD Models
IRFG6110R1 Part Data Attributes
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IRFG6110R1
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFG6110R1
TT Electronics Power and Hybrid / Semelab Limited
1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMELAB LTD | |
Part Package Code | DIP | |
Package Description | IN-LINE, R-CDIP-T14 | |
Pin Count | 14 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CDIP-T14 | |
JESD-609 Code | e1 | |
Number of Elements | 4 | |
Number of Terminals | 14 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for IRFG6110R1
This table gives cross-reference parts and alternative options found for IRFG6110R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFG6110R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTX2N7336 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | Infineon Technologies AG | IRFG6110R1 vs JANTX2N7336 |
2N7336PBF | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | International Rectifier | IRFG6110R1 vs 2N7336PBF |
IRFG6110-JQR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | IRFG6110R1 vs IRFG6110-JQR-B |
2N7336 | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, | Infineon Technologies AG | IRFG6110R1 vs 2N7336 |
2N7336-QR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | IRFG6110R1 vs 2N7336-QR-B |
2N7336R1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | IRFG6110R1 vs 2N7336R1 |
IRFG6110 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | International Rectifier | IRFG6110R1 vs IRFG6110 |
IRFG6110-JQR-BR1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | IRFG6110R1 vs IRFG6110-JQR-BR1 |
IRFG6110-JQR-BR1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | IRFG6110R1 vs IRFG6110-JQR-BR1 |
IRFG6110R1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | IRFG6110R1 vs IRFG6110R1 |