2SC5182-T1FB
Description: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-59, 3 PIN

Overview of 2SC5182-T1FB by NEC Compound Semiconductor Devices Ltd

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for 2SC5182-T1FB by NEC Compound Semiconductor Devices Ltd

2SC5182-T1FB
NEC Compound Semiconductor Devices Ltd
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description
PLASTIC, SC-59, 3 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
0.03 A
Collector-Base Capacitance-Max
0.8 pF
Collector-Emitter Voltage-Max
3 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
70
Highest Frequency Band
L BAND
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
0.09 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
12000 MHz
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  1. 2SC5182-T1FB
    NEC Compound Semiconductor Devices Ltd
    RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-59, 3 PIN
    VS

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