Part Details for 2SJ266 by SANYO Electric Co Ltd
Overview of 2SJ266 by SANYO Electric Co Ltd
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Part Details for 2SJ266
2SJ266 CAD Models
2SJ266 Part Data Attributes:
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2SJ266
SANYO Electric Co Ltd
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Datasheet
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2SJ266
SANYO Electric Co Ltd
Power Field-Effect Transistor, 8A I(D), 60V, 0.27ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SANYO ELECTRIC CO LTD | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 50 W | |
Power Dissipation-Max (Abs) | 1.65 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |