Parametric results for: 2SJ266 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 4 HIGH RELIABILITY 5

10 hits Apply

DRAIN 2

10 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 5

10 hits Apply

DS Breakdown Voltage-Min (1)

60 V 9

10 hits Apply

Drain Current-Max (ID) (1)

8 A 10

10 hits Apply

Drain-source On Resistance-Max (2)

200 mΩ 4 270 mΩ 5

Min (Ω) - Max (Ω)

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

10 hits Apply

R-PSIP-T3 5 R-PSSO-G2 4

10 hits Apply

Manufacturer (2)

SANYO Electric Co Ltd 8 SANYO Semiconductor Co Ltd 2

10 hits Apply

Number of Elements (1)

1 10

10 hits Apply

Number of Terminals (2)

2 4 3 5

10 hits Apply

DEPLETION MODE 2 ENHANCEMENT MODE 8

10 hits Apply

150.0 °C 2

10 hits Apply

PLASTIC/EPOXY 9

10 hits Apply

RECTANGULAR 9

10 hits Apply

IN-LINE 5 SMALL OUTLINE 4

10 hits Apply

Obsolete 8 Transferred 2

10 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 10

10 hits Apply

50 W 3

10 hits Apply

1.65 W 2

10 hits Apply

Surface Mount (2)

NO 5 YES 5

10 hits Apply