There are no models available for this part yet.
Overview of 2SK1010-01 by Fuji Electric Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2SK1010-01 by Fuji Electric Co Ltd
Part Data Attributes for 2SK1010-01 by Fuji Electric Co Ltd
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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COLLMER SEMICONDUCTOR INC
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Package Description
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FLANGE MOUNT, R-PSFM-T3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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AVALANCHE RATED
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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500 V
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Drain Current-Max (ID)
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6 A
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Drain-source On Resistance-Max
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1.6 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-220AB
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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80 W
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
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200 ns
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Turn-on Time-Max (ton)
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110 ns
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Alternate Parts for 2SK1010-01
This table gives cross-reference parts and alternative options found for 2SK1010-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1010-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ42 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4A I(D),TO-220AB | Intersil Corporation | 2SK1010-01 vs BUZ42 |
| IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | 2SK1010-01 vs IRF833 |
| BUK455-500B | TRANSISTOR 5.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | 2SK1010-01 vs BUK455-500B |
| IRF833 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,4A I(D),TO-220AB | Texas Instruments | 2SK1010-01 vs IRF833 |
| STP5N50 | 4.5A, 500V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | 2SK1010-01 vs STP5N50 |
| IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Micro Electronics Ltd | 2SK1010-01 vs IRF833 |
| IRF833 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | 2SK1010-01 vs IRF833 |
| BUZ42 | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | 2SK1010-01 vs BUZ42 |
| MTP4N50 | Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | 2SK1010-01 vs MTP4N50 |
| BUZ42 | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | 2SK1010-01 vs BUZ42 |