Part Details for 2SK1334BYTL-E by Renesas Electronics Corporation
Overview of 2SK1334BYTL-E by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SK1334BYTL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 200V 1A 3800Mohm Upak/Sc-62 |
Part Details for 2SK1334BYTL-E
2SK1334BYTL-E CAD Models
2SK1334BYTL-E Part Data Attributes
|
2SK1334BYTL-E
Renesas Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
2SK1334BYTL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 200V 1A 3800Mohm Upak/Sc-62, UPAK, /Embossed Tape
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | UPAK | |
Package Description | SMALL OUTLINE, R-PSSO-F3 | |
Pin Count | 4 | |
Manufacturer Package Code | PLZZ0004CA | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 1997-08-01 | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |