Part Details for 2SK3696-01MR by Fuji Electric Co Ltd
Overview of 2SK3696-01MR by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LPS4414-701MRB | Coilcraft Inc | General Purpose Inductor, 0.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT | |
LPS4414-301MRB | Coilcraft Inc | General Purpose Inductor, 0.3uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT | |
0805USBF-901MRB | Coilcraft Inc | Data Line Filter, 2 Function(s), EIA STD PACKAGE SIZE 0805, SMD, 4 PIN |
Part Details for 2SK3696-01MR
2SK3696-01MR CAD Models
2SK3696-01MR Part Data Attributes
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2SK3696-01MR
Fuji Electric Co Ltd
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Datasheet
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2SK3696-01MR
Fuji Electric Co Ltd
Power Field-Effect Transistor, 13A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 202 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.55 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 52 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK3696-01MR
This table gives cross-reference parts and alternative options found for 2SK3696-01MR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3696-01MR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FMV12N50ES | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(SLS), 3 PIN | Fuji Electric Co Ltd | 2SK3696-01MR vs FMV12N50ES |
IRHM8450PBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | Infineon Technologies AG | 2SK3696-01MR vs IRHM8450PBF |
SSF13N50F | Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | 2SK3696-01MR vs SSF13N50F |
ZDX130N50 | Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | 2SK3696-01MR vs ZDX130N50 |
FQPF13N50C_G | Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, SC-91A, TO-220F, FULL PACK-3 | Fairchild Semiconductor Corporation | 2SK3696-01MR vs FQPF13N50C_G |
FQPF13N50CT | Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, SC-91A, TO-220F, FULL PACK-3 | Fairchild Semiconductor Corporation | 2SK3696-01MR vs FQPF13N50CT |
11N50G-TF1-T | Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | 2SK3696-01MR vs 11N50G-TF1-T |
12N50G-TF1-T | Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | 2SK3696-01MR vs 12N50G-TF1-T |
11N50G-TF3-T | Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 2SK3696-01MR vs 11N50G-TF3-T |
FMI12N50E | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TPACK-3 | Fuji Electric Co Ltd | 2SK3696-01MR vs FMI12N50E |