There are no models available for this part yet.
Overview of 2N4355 by Central Semiconductor Corp
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
CAD Models for 2N4355 by Central Semiconductor Corp
Part Data Attributes for 2N4355 by Central Semiconductor Corp
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
CENTRAL SEMICONDUCTOR CORP
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.21.00.95
|
Collector Current-Max (IC)
|
1 A
|
Collector-Base Capacitance-Max
|
30 pF
|
Collector-Emitter Voltage-Max
|
60 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
75
|
JEDEC-95 Code
|
TO-105
|
JESD-30 Code
|
O-PBCY-W3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Polarity/Channel Type
|
PNP
|
Power Dissipation Ambient-Max
|
0.35 W
|
Power Dissipation-Max (Abs)
|
0.35 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
WIRE
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
100 MHz
|
Turn-off Time-Max (toff)
|
400 ns
|
Turn-on Time-Max (ton)
|
100 ns
|
VCEsat-Max
|
1 V
|
Alternate Parts for 2N4355
This table gives cross-reference parts and alternative options found for 2N4355. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4355, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BC556ADWP | Small Signal Bipolar Transistor, 65V V(BR)CEO, 1-Element, PNP, Silicon, 0.017 X 0.017 INCH, G2, DIE-2 | Zetex / Diodes Inc | 2N4355 vs BC556ADWP |
2N2907AW | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Microsemi Corporation | 2N4355 vs 2N2907AW |
2C3762 | Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, DIE-2 | Semicoa Semiconductors | 2N4355 vs 2C3762 |
2N2907AB-1 | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Microsemi Corporation | 2N4355 vs 2N2907AB-1 |
JANS2N2906A | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, 3 PIN | Defense Logistics Agency | 2N4355 vs JANS2N2906A |
2N2907ADS-1 | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Microsemi Corporation | 2N4355 vs 2N2907ADS-1 |
JANTXV2N2906AL | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, 3 PIN | Defense Logistics Agency | 2N4355 vs JANTXV2N2906AL |
2N2907A-220M-ISOR1 | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, TO-220M, 3 PIN | TT Electronics Resistors | 2N4355 vs 2N2907A-220M-ISOR1 |
2N2907AQ-LCC20 | 600mA, 60V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR | TT Electronics Power and Hybrid / Semelab Limited | 2N4355 vs 2N2907AQ-LCC20 |
JANS2N2906AL | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, 3 PIN | Defense Logistics Agency | 2N4355 vs JANS2N2906AL |
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