Part Details for 2N5096 by New England Semiconductor
Overview of 2N5096 by New England Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2N5096
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER BIPOLAR TRANSISTOR, 1A I(C), 500V V(BR)CEO, 1-ELEMENT, PNP, SILICON, METAL, 3 PIN | 9 |
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$59.9675 / $66.6306 | Buy Now |
Part Details for 2N5096
2N5096 CAD Models
2N5096 Part Data Attributes:
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2N5096
New England Semiconductor
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Datasheet
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2N5096
New England Semiconductor
Power Bipolar Transistor, 1A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 1 A | |
Collector-Base Capacitance-Max | 20 pF | |
Collector-Emitter Voltage-Max | 450 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 20 | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 4 W | |
Power Dissipation-Max (Abs) | 2 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 10 MHz | |
VCEsat-Max | 3 V |