Part Details for 2N6387 by NTE Electronics Inc
Overview of 2N6387 by NTE Electronics Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2N6387
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33C8326
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Newark | Transistor Npn Silicon Darlington 60V Ic=10A To-220 Case For Gen Purpose Amp And Low Speed Switch Rohs Compliant: Yes |Nte Electronics 2N6387 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
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DISTI #
2368-2N6387-ND
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DigiKey | TRANS NPN DARL 60V 10A TO220 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT |
32 In Stock |
|
$1.0500 / $1.2700 | Buy Now |
Part Details for 2N6387
2N6387 CAD Models
2N6387 Part Data Attributes
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2N6387
NTE Electronics Inc
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Datasheet
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2N6387
NTE Electronics Inc
Power Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Base Capacitance-Max | 200 pF | |
| Collector-Emitter Voltage-Max | 60 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 65 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 3 V |