Part Details for 2N6603 by Motorola Semiconductor Products
Overview of 2N6603 by Motorola Semiconductor Products
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Part Details for 2N6603
2N6603 CAD Models
2N6603 Part Data Attributes
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2N6603
Motorola Semiconductor Products
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Datasheet
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2N6603
Motorola Semiconductor Products
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | DISK BUTTON, O-CRDB-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Additional Feature | LOW NOISE | |
Collector Current-Max (IC) | 0.03 A | |
Collector-Base Capacitance-Max | 0.75 pF | |
Collector-Emitter Voltage-Max | 15 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
Highest Frequency Band | L BAND | |
JESD-30 Code | O-CRDB-F4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | DISK BUTTON | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.4 W | |
Power Dissipation-Max (Abs) | 0.4 W | |
Power Gain-Min (Gp) | 15 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |