Part Details for 2N6668 by Motorola Semiconductor Products
Overview of 2N6668 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2N6668
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | PNP DARLINGTON TRANSISTOR | 164 |
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$0.9000 / $2.4000 | Buy Now |
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Quest Components | PNP DARLINGTON TRANSISTOR | 100 |
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$1.8000 / $3.6000 | Buy Now |
Part Details for 2N6668
2N6668 CAD Models
2N6668 Part Data Attributes:
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2N6668
Motorola Semiconductor Products
Buy Now
Datasheet
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2N6668
Motorola Semiconductor Products
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, CASE 221A-06, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | CASE 221A-06, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Base Capacitance-Max | 200 pF | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 65 W | |
Power Dissipation-Max (Abs) | 26 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 20 MHz | |
VCEsat-Max | 3 V |