Transistors Power Bipolar Transistors 2N6668

2N6668 by

Description: Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220 Box

Overview of 2N6668 by New Jersey Semiconductor Products Inc

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Show differences only	2N6668 New Jersey Semiconductor Products Inc Buy Now	part-to-be-compared New Jersey Semiconductor Products Inc Buy Now
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Rohs Code	Yes
Part Life Cycle Code	Active
Ihs Manufacturer	NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code	unknown
ECCN Code	EAR99
HTS Code	8541.29.00.95
Case Connection	COLLECTOR
Collector Current-Max (IC)	10 A
Collector-Base Capacitance-Max	200 pF
Collector-Emitter Voltage-Max	80 V
Configuration	SINGLE
DC Current Gain-Min (hFE)	1000
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Terminals	3
Operating Temperature-Max	150 °C
Operating Temperature-Min	-65 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Polarity/Channel Type	PNP
Power Dissipation Ambient-Max	2 W
Power Dissipation-Max (Abs)	2 W
Surface Mount	NO
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	20 MHz
VCEsat-Max	2 V

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