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Overview of 2N6686 by New England Semiconductor
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2N6686 by New England Semiconductor
Part Data Attributes for 2N6686 by New England Semiconductor
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
NEW ENGLAND SEMICONDUCTOR
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
25 A
|
Collector-Emitter Voltage-Max
|
160 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
25
|
JEDEC-95 Code
|
TO-3
|
JESD-30 Code
|
O-MBFM-P2
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
200 °C
|
Package Body Material
|
METAL
|
Package Shape
|
ROUND
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
NPN
|
Power Dissipation Ambient-Max
|
200 W
|
Power Dissipation-Max (Abs)
|
114 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
PIN/PEG
|
Terminal Position
|
BOTTOM
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
20 MHz
|
Turn-off Time-Max (toff)
|
1250 ns
|
Turn-on Time-Max (ton)
|
450 ns
|
VCEsat-Max
|
1.5 V
|
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