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Part Details for 2N7000G by onsemi
Overview of 2N7000G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N7000G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Velocity Electronics | Our Stock | 2253 |
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RFQ | |
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DISTI #
1459027
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element14 Asia-Pacific | MOSFET, N, 60V, 0.2A, TO-92 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.2243 / $1.1434 | Buy Now |
Part Details for 2N7000G
2N7000G CAD Models
2N7000G Part Data Attributes
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2N7000G
onsemi
Buy Now
Datasheet
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Compare Parts:
2N7000G
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 1000-BLKBX
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-92 (TO-226) 5.33mm Body Height | |
| Package Description | LEAD FREE, CASE 29-11, TO-226, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 29-11 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7000G
This table gives cross-reference parts and alternative options found for 2N7000G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7000RL1 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7000G vs 2N7000RL1 |
| 2N7000_D75Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | onsemi | 2N7000G vs 2N7000_D75Z |
| 2N7000 | N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, 10000-BLKBG | onsemi | 2N7000G vs 2N7000 |
| 2N7000J14Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000G vs 2N7000J14Z |
| 2N7000BUD26Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | 2N7000G vs 2N7000BUD26Z |
| 2N7000TAD75Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | 2N7000G vs 2N7000TAD75Z |
| 2N7000J18Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000G vs 2N7000J18Z |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN | Fairchild Semiconductor Corporation | 2N7000G vs 2N7000 |
| 2N7000RL1 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Motorola Semiconductor Products | 2N7000G vs 2N7000RL1 |
| 2N7000D27Z | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | 2N7000G vs 2N7000D27Z |