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Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-2N7002-GCT-ND
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DigiKey | FET 60V 5.0 OHM SOT23 Min Qty: 1 Lead time: 7 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
13683 In Stock |
|
$0.0542 / $0.4500 | Buy Now |
DISTI #
863-2N7002-G
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Mouser Electronics | MOSFET FET 60V 5.0 OHM RoHS: Compliant | 224353 |
|
$0.0540 / $0.4600 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 41681 |
|
$0.0408 / $0.1556 | Buy Now |
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Rochester Electronics | 2N7002 - MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2479 |
|
$0.0519 / $0.0611 | Buy Now |
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2N7002-G
onsemi
Buy Now
Datasheet
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2N7002-G
onsemi
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.2 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |