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Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-1756-1-ND
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DigiKey | MOSFET N-CH 60V 0.25A SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
13333 In Stock |
|
$0.0360 / $0.3600 | Buy Now |
DISTI #
750-2N7002-HF
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Mouser Electronics | MOSFET 0.25A 60V N-CHANNEL MOSFET RoHS: Compliant | 7016 |
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$0.0350 / $0.3600 | Buy Now |
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Karl Kruse GmbH & Co KG | 9000 |
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RFQ | ||
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NAC | Power Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 9000 |
|
$0.0387 / $0.0961 | Buy Now |
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Chip 1 Exchange | INSTOCK | 9000 |
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RFQ |
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2N7002-HF
Comchip Technology Corporation Ltd
Buy Now
Datasheet
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2N7002-HF
Comchip Technology Corporation Ltd
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | COMCHIP TECHNOLOGY CO LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Comchip Technology | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.25 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.2 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.35 W | |
Power Dissipation-Max (Abs) | 0.35 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Element Material | SILICON |