Part Details for 2N7002-T1-E3 by Vishay Intertechnologies
Results Overview of 2N7002-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002-T1-E3 Information
2N7002-T1-E3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06J8892
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Newark | N Channel Mosfet, 60V, 115Ma To-236, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:115Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Vishay 2N7002-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14112 |
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$0.1370 | Buy Now |
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DISTI #
79R7745
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Newark | N Channel Mosfet, 60V, 115Ma To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:115Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:200Mw Rohs Compliant: Yes |Vishay 2N7002-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Bristol Electronics | 5000 |
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RFQ | ||
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Bristol Electronics | 3000 |
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RFQ | ||
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DISTI #
2N7002-T1-E3
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TME | Transistor: N-MOSFET, unipolar, 60V, 0.115A, 0.2W, SOT23 Min Qty: 10 | 7125 |
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$0.0437 / $0.0804 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 2137 |
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RFQ | |
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DISTI #
2N7002-T1-E3
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EBV Elektronik | Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R (Alt: 2N7002-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 115mA 0.08W 7.510V0.115A 2.5V 1 N-channel TO-236 MOSFETs ROHS | 25 |
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$0.0416 / $0.0438 | Buy Now |
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New Advantage Corporation | N-Ch. 60V MOSFET <7.5W RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$0.0500 | Buy Now |
Part Details for 2N7002-T1-E3
2N7002-T1-E3 CAD Models
2N7002-T1-E3 Part Data Attributes
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2N7002-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
2N7002-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | LOW THRESHOLD | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002-T1-E3
This table gives cross-reference parts and alternative options found for 2N7002-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002-T1-GE3 | Vishay Intertechnologies | $0.1269 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 2N7002-T1-E3 vs 2N7002-T1-GE3 |