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2N7002BKV,115 by:

2N7002BKV - 60 V, 340 mA dual N-channel Trench MOSFET SOT 6-Pin

Part Details for 2N7002BKV,115 by NXP Semiconductors

Overview of 2N7002BKV,115 by NXP Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for 2N7002BKV,115

Part # Distributor Description Stock Price Buy
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.34A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 53
  • 1 $0.4900
  • 11 $0.2450
  • 42 $0.1470
$0.1470 / $0.4900 Buy Now
Rochester Electronics 2N7002BKV - Small Signal Field-Effect Transistor, 0.34A, 60V, 2-Element, N-Channel,SOT6 RoHS: Compliant Status: Active Min Qty: 1 620
  • 1 $0.0636
  • 25 $0.0623
  • 100 $0.0598
  • 500 $0.0572
  • 1,000 $0.0541
$0.0541 / $0.0636 Buy Now

Part Details for 2N7002BKV,115

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2N7002BKV,115 Part Data Attributes

2N7002BKV,115 NXP Semiconductors
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2N7002BKV,115 NXP Semiconductors 2N7002BKV - 60 V, 340 mA dual N-channel Trench MOSFET SOT 6-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description ULTRA SMALL, PLASTIC PACKAGE-6
Pin Count 6
Manufacturer Package Code SOT666
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.34 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.14 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N7002BKV,115

This table gives cross-reference parts and alternative options found for 2N7002BKV,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002BKV,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N7002BKV,115 2N7002BKV - 60 V, 340 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin Nexperia 2N7002BKV,115 vs 2N7002BKV,115
Part Number Description Manufacturer Compare
DMN62D0UDW-7 Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 Diodes Incorporated 2N7002BKV,115 vs DMN62D0UDW-7
DMN62D0UDW-13 Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 Diodes Incorporated 2N7002BKV,115 vs DMN62D0UDW-13
2N7002BKV,115 2N7002BKV - 60 V, 340 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin Nexperia 2N7002BKV,115 vs 2N7002BKV,115

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