Part Details for 2N7002DW-13-F by Diodes Incorporated
Overview of 2N7002DW-13-F by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Automotive
Price & Stock for 2N7002DW-13-F
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N7002DW-13-F
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Avnet Silica | (Alt: 2N7002DW-13-F) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Part Details for 2N7002DW-13-F
2N7002DW-13-F CAD Models
2N7002DW-13-F Part Data Attributes
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2N7002DW-13-F
Diodes Incorporated
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Datasheet
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2N7002DW-13-F
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.23 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.4 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |