Part Details for 2N7002H-7 by Diodes Incorporated
Overview of 2N7002H-7 by Diodes Incorporated
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2N7002H-7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
30AK0334
|
Newark | Mosfet, N-Ch, 60V, 0.17A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002H-7 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.0540 / $0.2760 | Buy Now |
|
DISTI #
2N7002H-7DICT-ND
|
DigiKey | MOSFET N-CH 60V 170MA SOT23 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5012 In Stock |
|
$0.0263 / $0.2700 | Buy Now |
|
DISTI #
2N7002H-7
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002H-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 30001110000 Factory Stock |
|
$0.0202 / $0.0239 | Buy Now |
|
DISTI #
621-2N7002H-7
|
Mouser Electronics | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA RoHS: Compliant | 58746 |
|
$0.0240 / $0.2700 | Buy Now |
|
|
Future Electronics | N-Channel 60 V 170 mA 370 mW Enhancement Mode Surface Mount Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 9000Reel |
|
$0.0201 / $0.0230 | Buy Now |
|
|
Future Electronics | N-Channel 60 V 170 mA 370 mW Enhancement Mode Surface Mount Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.0201 / $0.0230 | Buy Now |
|
DISTI #
2N7002H-7
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002H-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 30001110000 Factory Stock |
|
$0.0202 / $0.0239 | Buy Now |
|
DISTI #
2N7002H-7
|
TME | Transistor: N-MOSFET, unipolar, 60V, 0.21A, 0.37W, SOT23 Min Qty: 20 | 11700 |
|
$0.0286 / $0.0429 | Buy Now |
|
DISTI #
2N7002H-7
|
Avnet Americas | Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002H-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 30001110000 Factory Stock |
|
$0.0202 / $0.0239 | Buy Now |
|
DISTI #
2N7002H-7
|
Avnet Silica | Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R (Alt: 2N7002H-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 3 Days | Silica - 6000 |
|
Buy Now |
Part Details for 2N7002H-7
2N7002H-7 CAD Models
2N7002H-7 Part Data Attributes
|
|
2N7002H-7
Diodes Incorporated
Buy Now
Datasheet
|
Compare Parts:
2N7002H-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |