Part Details for 2N7002K_R1_00001 by PanJit Semiconductor
Overview of 2N7002K_R1_00001 by PanJit Semiconductor
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for 2N7002K_R1_00001
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
241-2N7002K_R1_00001
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Mouser Electronics | MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant | 262939 |
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$0.0180 / $0.1800 | Buy Now |
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Bristol Electronics | 61806 |
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RFQ | ||
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DISTI #
2N7002K-R1
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TME | Transistor: N-MOSFET, unipolar, 60V, 300mA, Idm: 2A, 500mW, SOT23 Min Qty: 1 | 9000 |
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$0.0235 / $0.2492 | Buy Now |
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NAC | 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 17101436 |
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$0.0360 | Buy Now |
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DISTI #
2N7002K_R1_00001
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Avnet Asia | Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R (Alt: 2N7002K_R1_00001) RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
2N7002K_R1_00001
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Avnet Silica | Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R (Alt: 2N7002K_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days | Silica - 1050000 |
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Buy Now |
Part Details for 2N7002K_R1_00001
2N7002K_R1_00001 CAD Models
2N7002K_R1_00001 Part Data Attributes
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2N7002K_R1_00001
PanJit Semiconductor
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Datasheet
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Compare Parts:
2N7002K_R1_00001
PanJit Semiconductor
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | PANJIT | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002K_R1_00001
This table gives cross-reference parts and alternative options found for 2N7002K_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002K_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7002K-T1-GE3 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | Vishay Intertechnologies | 2N7002K_R1_00001 vs 2N7002K-T1-GE3 |
| 2N7002K-13 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N7002K_R1_00001 vs 2N7002K-13 |
| 2N7002K | Small Signal Field-Effect Transistor | Secos Corporation | 2N7002K_R1_00001 vs 2N7002K |
| 2N7002K-T1-E3 | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE PACKAGE-3, FET General Purpose Small Signal | Vishay Siliconix | 2N7002K_R1_00001 vs 2N7002K-T1-E3 |
| 2N7002KQ-13 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N7002K_R1_00001 vs 2N7002KQ-13 |
| 2N7002K | SMALL SIGNAL, FET | Kodenshi Sensing | 2N7002K_R1_00001 vs 2N7002K |
| 2N7002K-AU_R1_000A1 | Small Signal Field-Effect Transistor, | PanJit Semiconductor | 2N7002K_R1_00001 vs 2N7002K-AU_R1_000A1 |
| 2N7002K-C | Small Signal Field-Effect Transistor | Secos Corporation | 2N7002K_R1_00001 vs 2N7002K-C |
| 2N7002K-T1-GE3 | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND LEAD FREE PACKAGE-3, FET General Purpose Small Signal | Vishay Siliconix | 2N7002K_R1_00001 vs 2N7002K-T1-GE3 |
| 2N7002K-E3 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Intertechnologies | 2N7002K_R1_00001 vs 2N7002K-E3 |