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2N7002NXAK - 60 V, single N-channel Trench MOSFET@en-us TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N7002NXAKR by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AH8643
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Newark | Mosfet, N-Ch, 60V, 0.19A, To-236Ab, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:190Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002NXAKR RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 13904 |
|
$0.0460 / $0.1430 | Buy Now |
DISTI #
86AK6739
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Newark | Mosfet, N-Ch, 60V, 0.19A, To-236Ab Rohs Compliant: Yes |Nexperia 2N7002NXAKR RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0300 / $0.0350 | Buy Now |
DISTI #
2N7002NXAKR
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Avnet Americas | Power MOSFET, N Channel, 60 V, 300 mA, 4.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 93000 |
|
$0.0107 / $0.0119 | Buy Now |
DISTI #
2N7002NXAKR
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TME | Transistor: N-MOSFET, Trench, unipolar, 60V, 0.12A, Idm: 0.76A, ESD Min Qty: 1 | 12388 |
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$0.0159 / $0.0877 | Buy Now |
DISTI #
2N7002NXAKR
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Avnet Asia | Power MOSFET, N Channel, 60 V, 300 mA, 4.5 Ohm, SOT-23, 3 Pins, Surface Mount (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days | 33000 |
|
$0.0187 / $0.0265 | Buy Now |
DISTI #
2N7002NXAKR
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Avnet Silica | Power MOSFET N Channel 60 V 300 mA 45 Ohm SOT23 3 Pins Surface Mount (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
2N7002NXAKR
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EBV Elektronik | Power MOSFET N Channel 60 V 300 mA 45 Ohm SOT23 3 Pins Surface Mount (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 4.510V100mA 2.1V 1 N-channel SOT-23 MOSFETs ROHS | 3940 |
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$0.0111 / $0.0232 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 348000 |
|
$0.0179 / $0.0191 | Buy Now |
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Win Source Electronics | MOSFET N-CH 60V 190MA TO236AB / N-Channel 60 V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB | 30000 |
|
$0.0144 / $0.0216 | Buy Now |
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2N7002NXAKR
Nexperia
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Datasheet
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2N7002NXAKR
Nexperia
2N7002NXAK - 60 V, single N-channel Trench MOSFET@en-us TO-236 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Package Description | SOT-23, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.3 A | |
Drain-source On Resistance-Max | 5.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.33 W | |
Pulsed Drain Current-Max (IDM) | 0.76 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |