Datasheets
2N7002NXAKR by:

2N7002NXAK - 60 V, single N-channel Trench MOSFET@en-us TO-236 3-Pin

Part Details for 2N7002NXAKR by Nexperia

Results Overview of 2N7002NXAKR by Nexperia

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2N7002NXAKR Information

2N7002NXAKR by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002NXAKR

Part # Distributor Description Stock Price Buy
DISTI # 29AH8643
Newark Mosfet, N-Ch, 60V, 0.19A, To-236Ab, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:190Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002NXAKR RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 13904
  • 1 $0.1430
  • 10 $0.0860
  • 25 $0.0740
  • 50 $0.0610
  • 100 $0.0490
  • 250 $0.0460
$0.0460 / $0.1430 Buy Now
DISTI # 86AK6739
Newark Mosfet, N-Ch, 60V, 0.19A, To-236Ab Rohs Compliant: Yes |Nexperia 2N7002NXAKR RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.0350
  • 6,000 $0.0330
  • 12,000 $0.0320
  • 18,000 $0.0300
$0.0300 / $0.0350 Buy Now
DISTI # 2N7002NXAKR
Avnet Americas Power MOSFET, N Channel, 60 V, 300 mA, 4.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 93000
  • 3,000 $0.0119
  • 6,000 $0.0116
  • 12,000 $0.0113
  • 18,000 $0.0110
  • 24,000 $0.0107
$0.0107 / $0.0119 Buy Now
DISTI # 2N7002NXAKR
TME Transistor: N-MOSFET, Trench, unipolar, 60V, 0.12A, Idm: 0.76A, ESD Min Qty: 1 12388
  • 1 $0.0877
  • 10 $0.0556
  • 50 $0.0449
  • 100 $0.0295
  • 1,000 $0.0250
  • 1,500 $0.0233
  • 3,000 $0.0183
  • 9,000 $0.0164
  • 21,000 $0.0159
$0.0159 / $0.0877 Buy Now
DISTI # 2N7002NXAKR
Avnet Asia Power MOSFET, N Channel, 60 V, 300 mA, 4.5 Ohm, SOT-23, 3 Pins, Surface Mount (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 33000
  • 3,000 $0.0265
  • 6,000 $0.0207
  • 9,000 $0.0204
  • 15,000 $0.0201
  • 30,000 $0.0196
  • 75,000 $0.0192
  • 150,000 $0.0187
$0.0187 / $0.0265 Buy Now
DISTI # 2N7002NXAKR
Avnet Silica Power MOSFET N Channel 60 V 300 mA 45 Ohm SOT23 3 Pins Surface Mount (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
DISTI # 2N7002NXAKR
EBV Elektronik Power MOSFET N Channel 60 V 300 mA 45 Ohm SOT23 3 Pins Surface Mount (Alt: 2N7002NXAKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 4.510V100mA 2.1V 1 N-channel SOT-23 MOSFETs ROHS 3940
  • 20 $0.0232
  • 200 $0.0180
  • 600 $0.0152
  • 3,000 $0.0134
  • 9,000 $0.0119
  • 21,000 $0.0111
$0.0111 / $0.0232 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 348000
  • 9,000 $0.0191
  • 348,000 $0.0179
$0.0179 / $0.0191 Buy Now
Win Source Electronics MOSFET N-CH 60V 190MA TO236AB / N-Channel 60 V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB 30000
  • 2,315 $0.0216
  • 5,620 $0.0178
  • 8,725 $0.0172
  • 11,980 $0.0167
  • 15,530 $0.0161
  • 20,835 $0.0144
$0.0144 / $0.0216 Buy Now

Part Details for 2N7002NXAKR

2N7002NXAKR CAD Models

2N7002NXAKR Part Data Attributes

2N7002NXAKR Nexperia
Buy Now Datasheet
Compare Parts:
2N7002NXAKR Nexperia 2N7002NXAK - 60 V, single N-channel Trench MOSFET@en-us TO-236 3-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code TO-236
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant
Factory Lead Time 8 Weeks
Samacsys Manufacturer Nexperia
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 5.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.33 W
Pulsed Drain Current-Max (IDM) 0.76 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

2N7002NXAKR Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002NXAKR is -55°C to 150°C.

  • Yes, the 2N7002NXAKR is suitable for high-frequency switching applications due to its low gate charge and high switching speed.

  • The maximum current rating for the 2N7002NXAKR is 1.5 A.

  • Yes, the 2N7002NXAKR is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The typical turn-on time is 10 ns and the typical turn-off time is 20 ns.

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