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Transistors / Power Field-Effect Transistors / 2N7002NXBKR
Datasheets
2N7002NXBKR by: Nexperia

2N7002NXBK - 60 V, N-channel Trench MOSFET@en-us TO-236 3-Pin

Part Details for 2N7002NXBKR by Nexperia

Results Overview of 2N7002NXBKR by Nexperia

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2N7002NXBKR Information

2N7002NXBKR by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N7002NXBKR

Part # Distributor Description Stock Price Buy
DISTI # 29AH8644
Newark Mosfet, N-Ch, 60V, 0.27A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:270Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002NXBKR RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1076
  • 1 $0.1230
  • 10 $0.0880
  • 25 $0.0740
  • 50 $0.0600
$0.0600 / $0.1230 Buy Now
DISTI # 86AK6740
Newark Mosfet, N-Ch, 60V, 0.27A, Sot-23 Rohs Compliant: Yes |Nexperia 2N7002NXBKR RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.0380
  • 6,000 $0.0360
  • 12,000 $0.0350
  • 18,000 $0.0330
$0.0330 / $0.0380 Buy Now
DISTI # 2N7002NXBKR
Avnet Americas Transistor MOSFET N-CH 60V 0.33A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002NXBKR) RoHS: Compliant Min Qty: 48000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 48,000 $0.0131
  • 54,000 $0.0128
  • 102,000 $0.0125
  • 240,000 $0.0122
  • 480,000 $0.0119
$0.0119 / $0.0131 Buy Now
DISTI # 2N7002NXBKR
TME Transistor: N-MOSFET, Trench, unipolar, 60V, 0.17A, Idm: 0.9A, 0.31W Min Qty: 1 3198
  • 1 $0.1625
  • 10 $0.1043
  • 50 $0.0687
  • 100 $0.0569
  • 500 $0.0367
  • 1,000 $0.0305
  • 1,500 $0.0273
  • 3,000 $0.0226
  • 6,000 $0.0188
  • 9,000 $0.0184
$0.0184 / $0.1625 Buy Now
DISTI # 2N7002NXBKR
Avnet Asia Transistor MOSFET N-CH 60V 0.33A 3-Pin SOT-23 T/R (Alt: 2N7002NXBKR) RoHS: Compliant Min Qty: 63000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 63000
  • 63,000 $0.0146
  • 126,000 $0.0132
$0.0132 / $0.0146 Buy Now
DISTI # 2N7002NXBKR
Avnet Silica Transistor MOSFET NCH 60V 033A 3Pin SOT23 TR (Alt: 2N7002NXBKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 33000
Buy Now
DISTI # 2N7002NXBKR
EBV Elektronik Transistor MOSFET NCH 60V 033A 3Pin SOT23 TR (Alt: 2N7002NXBKR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 270mA 2.210V200mA 310mW 1.6V 1 N-channel SOT-23 MOSFETs ROHS 880
  • 20 $0.0360
  • 200 $0.0283
  • 600 $0.0240
  • 3,000 $0.0205
  • 9,000 $0.0183
  • 21,000 $0.0171
$0.0171 / $0.0360 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 132000
  • 9,000 $0.0194
  • 132,000 $0.0181
$0.0181 / $0.0194 Buy Now

Part Details for 2N7002NXBKR

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2N7002NXBKR Part Data Attributes

Parametric Data
2N7002NXBKR Nexperia
Buy Now Datasheet
Compare Parts:
2N7002NXBKR Nexperia 2N7002NXBK - 60 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code TO-236
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant
Samacsys Manufacturer Nexperia
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.33 A
Drain-source On Resistance-Max 3.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.67 W
Pulsed Drain Current-Max (IDM) 0.9 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

2N7002NXBKR Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N7002NXBKR is -55°C to 150°C.

  • Yes, the 2N7002NXBKR is suitable for high-frequency switching applications due to its low gate charge and high switching speed.

  • The maximum drain-source voltage rating for the 2N7002NXBKR is 60V.

  • Yes, the 2N7002NXBKR is AEC-Q101 qualified, making it suitable for use in automotive applications.

  • The typical turn-on time for the 2N7002NXBKR is 10ns, and the typical turn-off time is 20ns.

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