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Part Details for 2N7002P by NXP Semiconductors
Overview of 2N7002P by NXP Semiconductors
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2N7002P
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 27 | 605 |
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$0.0562 / $0.1875 | Buy Now |
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Bristol Electronics | 83130 |
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RFQ | ||
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Quest Components | 360 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 800 |
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$0.0500 / $0.2500 | Buy Now |
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Quest Components | 360 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 484 |
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$0.0750 / $0.2500 | Buy Now |
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Quest Components | 360 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | 61301 |
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$0.0450 / $0.3000 | Buy Now |
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ComSIT USA | 60 V, 360 MILLI AMP N-CHANNEL TRENCH MOSFET Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Compliant | Americas - 5693 |
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RFQ | |
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Win Source Electronics | MOSFET 2N-CH 60V 0.32A 6TSSOP / Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 | 1760861 |
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$0.0200 / $0.0240 | Buy Now |
Part Details for 2N7002P
2N7002P CAD Models
2N7002P Part Data Attributes
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2N7002P
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
2N7002P
NXP Semiconductors
360mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT-23 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.36 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |