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2N7002PS - 60 V, 320 mA dual N-channel Trench MOSFET@en-us TSSOP 6-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
36AH1090
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Newark | 2N7002Ps/Sot363/Sc-88 Rohs Compliant: Yes |Nexperia 2N7002PS,115 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 36000 |
|
$0.0400 | Buy Now |
DISTI #
28T0308
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Newark | Mosfet,nn Channel,60V,0.32A,sot363, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:320Ma, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Nexperia 2N7002PS,115 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 101950 |
|
$0.0980 / $0.3930 | Buy Now |
DISTI #
86AK7917
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Newark | Mosfet, N-Ch, 60V, 0.32A, Sot-363-6, Transistor Polarity:N Channel, Continuous Drain Current Id:320Ma, Drain Source Voltage Vds:60V, On Resistance Rds(On):1Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.75V, Power Rohs Compliant: Yes |Nexperia 2N7002PS,115 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 51000 |
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$0.0560 / $0.0680 | Buy Now |
DISTI #
1727-4791-1-ND
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DigiKey | MOSFET 2N-CH 60V 0.32A 6TSSOP Min Qty: 1 Lead time: 6 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
25258 In Stock |
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$0.0427 / $0.3600 | Buy Now |
DISTI #
2N7002PS,115
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.32A 6-Pin SOT-363 T/R - Tape and Reel (Alt: 2N7002PS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 36000 |
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$0.0335 / $0.0400 | Buy Now |
DISTI #
2N7002PS,115
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.32A 6-Pin SOT-363 T/R - Tape and Reel (Alt: 2N7002PS,115) RoHS: Compliant Min Qty: 21000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
|
$0.0571 | Buy Now |
DISTI #
2N7002PS,115
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 0.32A 6-Pin SOT-363 T/R - Tape and Reel (Alt: 2N7002PS,115) RoHS: Compliant Min Qty: 21000 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
|
$0.0335 / $0.0400 | Buy Now |
DISTI #
771-2N7002PS-115
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Mouser Electronics | MOSFET 2N7002PS/SOT363/SC-88 RoHS: Compliant | 165623 |
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$0.0480 / $0.3600 | Buy Now |
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Future Electronics | 2N7002PS Series N-Channel 60 V 1.6 Ohm 280 mW 0.8 nC SMT TrenchMOS FET - SOT-363 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 21000Reel |
|
$0.0426 / $0.0481 | Buy Now |
|
Future Electronics | 2N7002PS Series N-Channel 60 V 1.6 Ohm 280 mW 0.8 nC SMT TrenchMOS FET - SOT-363 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 12000Reel |
|
$0.0426 / $0.0478 | Buy Now |
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2N7002PS,115
Nexperia
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Datasheet
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2N7002PS,115
Nexperia
2N7002PS - 60 V, 320 mA dual N-channel Trench MOSFET@en-us TSSOP 6-Pin
|
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TSSOP | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Manufacturer Package Code | SOT363 | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.32 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |