There are no models available for this part yet.
Overview of 2SA1941-O by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for 2SA1941-O by Toshiba America Electronic Components
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Quest Components | POWER BIPOLAR TRANSISTOR, 10A I(C), 140V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN | 82 |
|
$1.8750 / $3.7500 | Buy Now | ||
Win Source Electronics | Power Amplifier Applications4 | 89485 |
|
$0.4340 / $0.6500 | Buy Now |
CAD Models for 2SA1941-O by Toshiba America Electronic Components
Part Data Attributes for 2SA1941-O by Toshiba America Electronic Components
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
TOSHIBA CORP
|
Package Description
|
2-16C1A, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
10 A
|
Collector-Emitter Voltage-Max
|
140 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
80
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
PNP
|
Power Dissipation Ambient-Max
|
100 W
|
Power Dissipation-Max (Abs)
|
100 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
AMPLIFIER
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
30 MHz
|
VCEsat-Max
|
2 V
|
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