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Overview of 2SB1375 by Galaxy Microelectronics
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2SB1375 by Galaxy Microelectronics
Part Data Attributes for 2SB1375 by Galaxy Microelectronics
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
Part Package Code
|
TO-220AB
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Collector Current-Max (IC)
|
3 A
|
Collector-Emitter Voltage-Max
|
60 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
15
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
PNP
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
9 MHz
|
Want to compare parts?
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Galaxy MicroelectronicsMedium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1.5V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 9+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220ABVS
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