2SB1375
Description: Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1.5V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 9+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Overview of 2SB1375 by Galaxy Microelectronics

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for 2SB1375 by Galaxy Microelectronics
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Part Data Attributes for 2SB1375 by Galaxy Microelectronics

2SB1375
Galaxy Microelectronics
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
3 A
Collector-Emitter Voltage-Max
60 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
15
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
PNP
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
9 MHz
Want to compare parts?
  1. 2SB1375
    Galaxy Microelectronics
    Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1.5V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 9+ MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB
    VS

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