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2SD2061 by:

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 8+ MHz; PTM Max (W): 2W; Package: ITO-220AB; package_code: ITO-220AB; mfr_package_code: ITO-220AB

Part Details for 2SD2061 by Galaxy Microelectronics

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Part Details for 2SD2061

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2SD2061 Part Data Attributes

2SD2061 Galaxy Microelectronics
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2SD2061 Galaxy Microelectronics Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 100; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 2000mA; IB (mA): 200mA; FT Min (MHz): 8+ MHz; PTM Max (W): 2W; Package: ITO-220AB; package_code: ITO-220AB; mfr_package_code: ITO-220AB
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code ITO-220AB
Package Description ITO-220AB, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8 MHz

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