Part Details for 2SJ210(0)-T1B-A by Renesas Electronics Corporation
Overview of 2SJ210(0)-T1B-A by Renesas Electronics Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for 2SJ210(0)-T1B-A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-2SJ210(0)-T1B-A-ND
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DigiKey | P-CHANNEL SMALL SIGNAL MOSFET Min Qty: 902 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
19913 In Stock |
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$0.3300 | Buy Now |
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Rochester Electronics | 2SJ210 - Small Signal Field-Effect Transistor, 0.2A, 60V, P-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 19913 |
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$0.2856 / $0.3360 | Buy Now |
Part Details for 2SJ210(0)-T1B-A
2SJ210(0)-T1B-A CAD Models
2SJ210(0)-T1B-A Part Data Attributes
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2SJ210(0)-T1B-A
Renesas Electronics Corporation
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Datasheet
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2SJ210(0)-T1B-A
Renesas Electronics Corporation
Power MOSFETs for Automotive, MM, /
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | MM | |
Package Description | MINIMOLD, SC-59, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | PLSP0003ZD-A3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e6 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.2 W | |
Surface Mount | YES | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SJ210(0)-T1B-A
This table gives cross-reference parts and alternative options found for 2SJ210(0)-T1B-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ210(0)-T1B-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SJ210(0)-T1B-AT | Power MOSFETs for Automotive, MM, / | Renesas Electronics Corporation | 2SJ210(0)-T1B-A vs 2SJ210(0)-T1B-AT |
2SJ210-T1B | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN | NEC Electronics Group | 2SJ210(0)-T1B-A vs 2SJ210-T1B |
2SJ210-T2B-A | Power MOSFETs for Automotive, MM, / | Renesas Electronics Corporation | 2SJ210(0)-T1B-A vs 2SJ210-T2B-A |
2SJ210-T2B | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN | NEC Electronics Group | 2SJ210(0)-T1B-A vs 2SJ210-T2B |