Transistors
2SK2887TL
ROHM Semiconductor
Description: Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN

Overview of 2SK2887TL by ROHM Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for 2SK2887TL by ROHM Semiconductor

Part # Manufacturer Description Stock Price Buy
DISTI # 2SK2887TLCT-ND
DigiKey MOSFET N-CH 200V 3A CPT3 Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.1100
$2.1100 Buy Now
Quest Components   459
  • 1 $3.9280
  • 154 $1.8167
  • 331 $1.6203
$1.6203 / $3.9280 Buy Now

CAD Models for 2SK2887TL by ROHM Semiconductor
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Part Data Attributes for 2SK2887TL by ROHM Semiconductor

2SK2887TL
ROHM Semiconductor
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
ROHM CO LTD
Part Package Code
SC-63
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Configuration
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3 A
Drain-source On Resistance-Max
0.9 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e2
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
12 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Copper (Sn/Cu)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. 2SK2887TL
    ROHM Semiconductor
    Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN
    VS

Alternate Parts for 2SK2887TL

This table gives cross-reference parts and alternative options found for 2SK2887TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2887TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2SK2887 Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHM Semiconductor 2SK2887TL vs 2SK2887
Part Number Description Manufacturer Compare
IRFR222 Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor 2SK2887TL vs IRFR222
2SK2430TR Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ROHM Semiconductor 2SK2887TL vs 2SK2430TR
2SK2430 Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ROHM Semiconductor 2SK2887TL vs 2SK2430
FQD4N20LTM Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 2SK2887TL vs FQD4N20LTM
FDD6N20TF Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D-PAK-3 Fairchild Semiconductor Corporation 2SK2887TL vs FDD6N20TF
IRFR2229A 3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation 2SK2887TL vs IRFR2229A
2SK2887 Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHM Semiconductor 2SK2887TL vs 2SK2887
FS5VS-5 Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors 2SK2887TL vs FS5VS-5
2SK1335(S)TL Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd 2SK2887TL vs 2SK1335(S)TL
FS10ASJ-03 10A, 30V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, MP-3, 3 PIN Renesas Electronics Corporation 2SK2887TL vs FS10ASJ-03

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