There are no models available for this part yet.
Overview of 2SK3599-01MR by Fuji Electric Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LPS4414-701MRB | Coilcraft Inc | General Purpose Inductor, 0.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT | |
LPS4414-301MRB | Coilcraft Inc | General Purpose Inductor, 0.3uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT | |
0805USBF-901MRB | Coilcraft Inc | Data Line Filter, 2 Function(s), EIA STD PACKAGE SIZE 0805, SMD, 4 PIN |
CAD Models for 2SK3599-01MR by Fuji Electric Co Ltd
Part Data Attributes for 2SK3599-01MR by Fuji Electric Co Ltd
|
|
---|---|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
FUJI ELECTRIC CO LTD
|
Part Package Code
|
TO-220AB
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
227 mJ
|
Case Connection
|
ISOLATED
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
20 A
|
Drain-source On Resistance-Max
|
0.062 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
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JESD-30 Code
|
R-PSFM-T3
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Number of Elements
|
1
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Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
FLANGE MOUNT
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Polarity/Channel Type
|
N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
80 A
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Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
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Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for 2SK3599-01MR
This table gives cross-reference parts and alternative options found for 2SK3599-01MR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3599-01MR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK1549R | Power Field-Effect Transistor, 20A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fuji Electric Co Ltd | 2SK3599-01MR vs 2SK1549R |
2SK2108 | Power Field-Effect Transistor, 6A I(D), 250V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | SANYO Electric Co Ltd | 2SK3599-01MR vs 2SK2108 |
2SK2142 | 12A, 250V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | onsemi | 2SK3599-01MR vs 2SK2142 |
2SK3468-01 | Power Field-Effect Transistor, 14A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | 2SK3599-01MR vs 2SK3468-01 |
2SK3415LS | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK3599-01MR vs 2SK3415LS |
APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | 2SK3599-01MR vs APT5020BVFRG |
2SK3823 | Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | 2SK3599-01MR vs 2SK3823 |
2SK4191LS | Power Field-Effect Transistor, 4.8A I(D), 400V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN | SANYO Electric Co Ltd | 2SK3599-01MR vs 2SK4191LS |
2SK890 | TRANSISTOR 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | 2SK3599-01MR vs 2SK890 |
2SK2678LS | Power Field-Effect Transistor, 1.5A I(D), 600V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FI, 3 PIN | SANYO Electric Co Ltd | 2SK3599-01MR vs 2SK2678LS |