Datasheets
2SK3666-2-TB-E by: onsemi

N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP, SC-59 / CP, 3000-REEL

Part Details for 2SK3666-2-TB-E by onsemi

Overview of 2SK3666-2-TB-E by onsemi

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Applications Automotive

Price & Stock for 2SK3666-2-TB-E

Part # Distributor Description Stock Price Buy
DISTI # 70465737
RS 2SK3666-2-TB-E N-channel JFET Transistor, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23 | ON Semiconductor 2SK3666-2-TB-E RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Container: Bulk 0
  • 100 $0.1160
  • 1,000 $0.1100
  • 5,000 $0.1040
  • 10,000 $0.0980
$0.0980 / $0.1160 RFQ
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.01A I(D), 1-ELEMENT, N-CHANNEL, SILICON, JUNCTION FET 2078
  • 1 $0.5200
  • 25 $0.2340
  • 215 $0.1560
$0.1560 / $0.5200 Buy Now
Rochester Electronics 2SK3666 - N-Channel Junction Silicon FET For Low-Frequency General-Purpose Amplifier, Impedance Converter Applications RoHS: Compliant Status: Active Min Qty: 1 488559
  • 1 $0.0665
  • 25 $0.0652
  • 100 $0.0625
  • 500 $0.0599
  • 1,000 $0.0565
$0.0565 / $0.0665 Buy Now

Part Details for 2SK3666-2-TB-E

2SK3666-2-TB-E CAD Models

2SK3666-2-TB-E Part Data Attributes

2SK3666-2-TB-E onsemi
Buy Now Datasheet
Compare Parts:
2SK3666-2-TB-E onsemi N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP, SC-59 / CP, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Pin Count 3
Manufacturer Package Code 318BJ
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE
Drain Current-Max (ID) 0.01 A
FET Technology JUNCTION
JESD-30 Code R-PDSO-G3
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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