Part Details for 3LN01C-TB-H by SANYO Semiconductor Co Ltd
Overview of 3LN01C-TB-H by SANYO Semiconductor Co Ltd
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Part Details for 3LN01C-TB-H
3LN01C-TB-H CAD Models
3LN01C-TB-H Part Data Attributes
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3LN01C-TB-H
SANYO Semiconductor Co Ltd
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3LN01C-TB-H
SANYO Semiconductor Co Ltd
Small Signal Field-Effect Transistor, 0.15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, CP, SC-59, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SANYO SEMICONDUCTOR CO LTD | |
Package Description | HALOGEN AND LEAD FREE, CP, SC-59, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 0.15 A | |
Drain-source On Resistance-Max | 3.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |