Part Details for 3SK177-U73 by NEC Electronics Group
Overview of 3SK177-U73 by NEC Electronics Group
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Audio and Video Systems
Telecommunications
Entertainment and Gaming
Price & Stock for 3SK177-U73
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Component Electronics, Inc | IN STOCK SHIP TODAY | 150 |
|
Buy Now |
Part Details for 3SK177-U73
3SK177-U73 CAD Models
3SK177-U73 Part Data Attributes
|
|
3SK177-U73
NEC Electronics Group
Buy Now
Datasheet
|
Compare Parts:
3SK177-U73
NEC Electronics Group
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Package Description | MINIMOLD PACKAGE-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.04 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 16 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |